Descripción
|
|
---|---|
The use of Ga-Au alloys as metal catalysts for the growth of SiGe nanowires has been investigated. The grown nanowires are cylindrical and straight, with a defect-free crystalline structure, sharp nanowire-droplet interfaces and an almost constant Ge atomic fraction throughout all their length. These features represent significant improvements over the results obtained using pure Au | |
Internacional
|
Si |
Nombre congreso
|
Materials Research Society 2011 Fall Meeting |
Tipo de participación
|
960 |
Lugar del congreso
|
Boston |
Revisores
|
Si |
ISBN o ISSN
|
1946-4274 |
DOI
|
10.1557/opl.2012.34 |
Fecha inicio congreso
|
28/11/2011 |
Fecha fin congreso
|
02/12/2011 |
Desde la página
|
1 |
Hasta la página
|
6 |
Título de las actas
|
Materials Research Society Symposium Proceedings 1408, BB10-07 (2012) MRS Online Proceedings Library |