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Descripción
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| We report a low temperature deposition process of kesterite Cu2ZnSnS4 thin film solar absorbers that combines magnetron sputtering of a Cu:Sn:Zn alloy target with evaporation of S chalcogen atoms with a linear valved cracked effusion cell. The sputtering of the metallic precursor is performed in DC and HIPIMS mode. The use of a pulsed sulfur evaporation cell avoids high energetic S anion bombardment of the growing film, allows excellent control of the atomic S flux through the film thickness and avoids target poisoning during film growth. The deposited film absorbers are nearly stoichiometric and show kesterite CZTS phase as indicated by X-ray diffraction, Raman scattering, optical absorption and photoluminescence measurements. This deposition method is suitable for its application in large-area inline manufacturing process, as it uses a magnetron sputtering source and a specially designed large area effusion cell. | |
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Internacional
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Si |
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Nombre congreso
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EMRS 2012 Spring Meeting - Symposium B: Thin Film Chalcogenide Photovoltaic Materials |
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Tipo de participación
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960 |
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Lugar del congreso
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Strasbourg, France |
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Revisores
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Si |
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ISBN o ISSN
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000-0000-000-000 |
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DOI
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Fecha inicio congreso
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14/05/2012 |
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Fecha fin congreso
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18/05/2012 |
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Desde la página
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Hasta la página
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2 |
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Título de las actas
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Proc. EMRS 2012 Spring Meeting |