Descripción
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Si(100) and Ge(100) substrates essential for subsequent III-V integration were studied in the hydrogen ambient of a metalorganic vapor phase epitaxy reactor. Reflectance anisotropy spectroscopy (RAS) enabled us to distinguish characteristic configurations of vicinal Si(100) in situ: covered with oxide, cleaned by thermal removing in H2, and terminated with monohydrides when cooling in H2 ambient. RAS measurements during cooling in H2 ambient after the oxide removal process revealed a transition from the clean to the monohydride terminated Si(100) surface dependent on process temperature. For vicinal Ge(100) we observed a characteristic RA spectrum after annealing and cooling in H2 ambient. According to results from X-ray photo electron spectroscopy and Fourier-transform infrared spectroscopy the spectrum corresponds to the monohydride terminated Ge(100) surface. | |
Internacional
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Si |
Nombre congreso
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8th International Conference on Concentrating Photovoltaic Systems |
Tipo de participación
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960 |
Lugar del congreso
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Toledo (Spain) |
Revisores
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Si |
ISBN o ISSN
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978-0-7354-1086-2 |
DOI
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10.1063/1.4753827 |
Fecha inicio congreso
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16/04/2012 |
Fecha fin congreso
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18/04/2012 |
Desde la página
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32 |
Hasta la página
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35 |
Título de las actas
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AIP Conference Proceedings, 1477, 32-35 (2012) |