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Descripción
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| Vicinal Ge(100) substrates represent almost perfect templates for IIIV nucleation and are therefore established as substrates for III-V triple junction solar cells grown by metal-organic vapor phase epitaxy (MOVPE). An important requirement to achieve low defect densities in the III-V epilayers is a suitable Ge(100) surface preparation prior to heteroepitaxy. We applied in situ reflectance anisotropy spectroscopy (RAS) to study the Ge(100) surface during preparation. A contamination free MOVPE to ultrahigh vacuum (UHV) transfer system allowed us to correlate the spectra to results from various surface science methods. Processing of Ge(100) in MOVPE environment under hydrogen led to a surface free of oxides and carbon, covered by monohydrides. Vicinal Ge(100) exhibits a preferential (2×1) surface reconstruction domain, i.e. D | |
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Internacional
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Si |
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Nombre congreso
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76th Annual Meeting of the DPG and DPG Spring Meeting |
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Tipo de participación
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960 |
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Lugar del congreso
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Berlin |
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Revisores
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Si |
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ISBN o ISSN
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0-000000-00-0 |
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DOI
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Fecha inicio congreso
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25/03/2012 |
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Fecha fin congreso
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30/03/2012 |
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Desde la página
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1 |
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Hasta la página
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1 |
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Título de las actas
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Proc. 76th Annual Meeting of the DPG and DPG Spring Meeting |