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Descripción
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| The Ge(100) surface preparation is important regarding low defect densities in subsequently grown III-V epilayers as required for highperformance devices. We studied Ge(100) surfaces with 6° offcut towards [011] in metal-organic vapor phase epitaxy (MOVPE) ambient with reflectance anisotropy spectroscopy (RAS). We correlate in situ RA spectra to results from X-ray photoemission spectroscopy (XPS), low energy electron diffraction (LEED), scanning tunneling microscopy (STM) and Fourier-transform infrared spectroscopy (FTIR), all accessible via a contamination-free MOVPE to UHV transfer system [1]. H2 annealing removes oxides and carbon from Ge(100) substrates as confirmed by XPS. LEED pattern indicate a strong preferential (2x1) surface reconstruction domain and DB steps. According to FTIR, H2 annealing leads to monohydride termination. We assign differences in the RA spectra of vicinal Ge(100) between H2 annealed and UHV prepared samples [2] to the monohydride termination. Exposure to As, originating either from TBAs or from background As in the MOVPE reactor, modifies the surface differently [3]. Transitions between preferential (1x2) or (2x1) surface reconstructions of differently As terminated Ge(100) surfaces depended on temperature, supply and source of As and can be observed in situ by RAS. [1] T. Hannappel et al., Rev. Sci. Instrum. 75, 1297 (2004) [2] U. Rossow et al., J. Vac. Sci. Technol. B 18, 2229 (2000) [3] W. E. McMahon and J. M. Olson, PRB 60, 15999 (1999) | |
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Internacional
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Nombre congreso
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European Material Research Society 2012 |
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Tipo de participación
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960 |
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Lugar del congreso
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Strasbourg (France) |
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Revisores
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ISBN o ISSN
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0-000000-00-0 |
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DOI
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Fecha inicio congreso
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14/05/2012 |
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Fecha fin congreso
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18/05/2012 |
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Desde la página
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1 |
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Hasta la página
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1 |
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Título de las actas
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Proc. E-MRS 2012 |