Descripción
|
|
---|---|
Defect interaction can take place in CdTe under Te and Bi rich conditions. We demonstrate in this work through first principles calculations, that this phenomenon allows a Jahn Teller distortion to form an isolated half-filled intermediate band in the host semiconductor band-gap. This delocalized energy band supports the experimental deep level reported in the host band-gap of CdTe at a low bismuth concentration. Furthermore, the calculated optical absorption of CdTe:Bi in this work shows a significant subband-gap absorption that also supports the enhancement of the optical absorption found in the previous experimental results. | |
Internacional
|
No |
JCR del ISI
|
No |
Título de la revista
|
Solar Energy Materials And Solar Cells |
ISSN
|
0927-0248 |
Factor de impacto JCR
|
|
Información de impacto
|
|
Volumen
|
|
DOI
|
|
Número de revista
|
|
Desde la página
|
99 |
Hasta la página
|
103 |
Mes
|
SIN MES |
Ranking
|