Observatorio de I+D+i UPM

Memorias de investigación
Artículos en revistas:
Investigation of AlInN barrier ISFET structures with GaN capping for pH detection
Año:2013
Áreas de investigación
  • Electroquímica,
  • Dispositivos sensores,
  • Otros dispositivos electrónicos
Datos
Descripción
The pH response of GaN/AlInN/AlN/GaN ion-sensitive field effect transistor (ISFET) on Si substrates has been characterized. We analyzed the variation of the surface potential (?Vsp/?pH) and current (?Ids/?pH) with solution pH in devices with the same indium content (17%, in-plane lattice-matched to GaN) and different AlInN thickness (6 nm and 10 nm), and compared with the literature. The shrinkage of the barrier, that has the effect to increase the transconductance of the device, makes the 2-dimensional electron density (2DEG) at the interface very sensitive to changes in the surface. Although the surface potential sensitivity to pH is similar in the two devices, the current change with pH (?Ids/?pH), when biasing the ISFET by a Ag/AgCl reference electrode, is almost 50% higher in the device with 6 nm AlInN barrier, compared to the device with 10 nm barrier. When measuring the current response (?Ids/?pH) without reference electrode, the device with thinner AlInN layer has a larger response than the thicker one, of a factor of 140%, and that current response without reference electrode is only 22% lower than its maximum response obtained using reference electrode.
Internacional
Si
JCR del ISI
Si
Título de la revista
Sensors And Actuators B-Chemical
ISSN
0925-4005
Factor de impacto JCR
3,898
Información de impacto
Datos JCR del año 2011
Volumen
176
DOI
Número de revista
Desde la página
704
Hasta la página
707
Mes
SIN MES
Ranking
Esta actividad pertenece a memorias de investigación
Participantes
  • Autor: Tommaso Brazzini . (UPM)
  • Autor: Ana Mª Bengoechea Encabo (UPM)
  • Autor: Miguel Angel Sanchez Garcia (UPM)
  • Autor: Fernando Calle Gomez (UPM)
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Grupo de Dispositivos Semiconductores del ISOM
  • Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología
  • Departamento: Ingeniería Electrónica
S2i 2021 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)