Artículos en revistas:
Impact of AlN Spacer on Metal?Semiconductor?Metal Pt?InAlGaN/GaN Heterostructures for Ultraviolet Detection
Impact of AlN Spacer on Metal?Semiconductor?Metal Pt?InAlGaN/GaN Heterostructures for Ultraviolet Detection
Año:2013
Áreas de investigación
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Fisica sb -- semiconductores y estructura de bandas, -
Dispositivos fotónicos receptores de luz,
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Dispositivos semiconductores de potencia,
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Tecnología de dispositivos para ingeniería eléctrica y electrónica
Datos
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Descripción
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| We report on metal-semiconductor-metal (MSM) photodetectors (PDs) fabricated on InAlGaN/GaN two-dimensional electron gas (2DEG) heterostructures. Electrical and photodetection properties were compared in two structures with and without an AlN spacer between the barrier (InAlGaN) and the GaN. The presence of the spacer hugely reduces the leakage current, allowing biasing at higher voltages. In photodetection, gain is obtained in both structures at a high bias. The photocurrent transient behavior revealed a faster response for excitation energy close to the GaN band edge than for energy above the barrier band edge. The fabrication and improvement of this type of device can lead to integration with the already mature high-electron-mobility transistor (HEMT) technology. | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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Japanese Journal of Applied Physics |
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ISSN
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0021-4922 |
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Factor de impacto JCR
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1,058 |
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Información de impacto
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Datos JCR del año 2011 |
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Volumen
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52 |
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DOI
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Número de revista
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Desde la página
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08JK04 |
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Hasta la página
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4pp |
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Mes
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SIN MES |
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Ranking
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Participantes
- Autor: Tommaso Brazzini . (UPM)
- Autor: Saurabh Pandey (Department of Physics, University of Bologna)
- Autor: Fatima Romero Rojo (UPM)
- Autor: Pavel Yu. Bokov (Faculty of Physics, Moscow State University)
- Autor: Martin Feneberg (Institut fur Experimentelle Physik, Otto-von-Guericke-Universitat Magdeburg)
- Autor: Gema Tabares Jimenez (UPM)
- Autor: Anna Cavallini (Department of Physics, University of Bologna)
- Autor: Ruediger Goldhahn (Institut fur Experimentelle Physik, Otto-von-Guericke-Universitat Magdeburg)
- Autor: Fernando Calle Gomez (UPM)
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
- Creador: Departamento: Ingeniería Electrónica
S2i 2023 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)