Research Publications in journals:
Nanocrack-induced leakage current in AlInN/AlN/GaN
Year:2012
Research Areas
- Physics - Structure of materials,
- Physics - Semiconductors and band structure,
- Technology of devices for engineering
Information
|
Abstract
|
|
|---|---|
| Here we report on the study of nano-crack formation in Al1?xInxN/AlN/GaN heterostructures, on its association with composition fluctuation and on its local electrical properties. It is shown here that indium segregation at nano-cracks and threading dislocations originating from the non-pseudomorphic AlN interlayer could be the cause of the high reverse-bias gate leakage current of Ni/Au Schottky contacts on Al1?xInxN/AlN/GaN heterostructures and significantly affects the contact rectifying behavior. Segregation of indium around crack tips in Al1?xInxN acting as conductive paths was assessed with conductive atomic force microscopy. | |
|
International
|
Si |
|
JCR
|
Si |
|
Title
|
Scripta Materialia |
|
ISBN
|
1359-6462 |
|
Impact factor JCR
|
2,699 |
|
Impact info
|
Datos JCR del año 2011 |
|
Volume
|
66 |
|
|
|
|
Journal number
|
|
|
From page
|
327 |
|
To page
|
330 |
|
Month
|
SIN MES |
|
Ranking
|
|
Open Access publication
Participants
- Autor: albert minj Department of Physics, University of Bologna
- Autor: Daniela Cavalcoli Department of Physics, University of Bologna
- Autor: saurabh pandey Department of Physics, University of Bologna
- Autor: Beatrice Fraboni Department of Physics, University of Bologna
- Autor: Anna Cavallini Department of Physics, University of Bologna
- Autor: Tommaso Brazzini . UPM
- Autor: Fernando Calle Gomez UPM
Research Group, Departaments and Institutes related
- Creador: Departamento: Ingeniería Electrónica