Abstract
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Here we report on the study of nano-crack formation in Al1?xInxN/AlN/GaN heterostructures, on its association with composition fluctuation and on its local electrical properties. It is shown here that indium segregation at nano-cracks and threading dislocations originating from the non-pseudomorphic AlN interlayer could be the cause of the high reverse-bias gate leakage current of Ni/Au Schottky contacts on Al1?xInxN/AlN/GaN heterostructures and significantly affects the contact rectifying behavior. Segregation of indium around crack tips in Al1?xInxN acting as conductive paths was assessed with conductive atomic force microscopy. | |
International
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Si |
JCR
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Si |
Title
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Scripta Materialia |
ISBN
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1359-6462 |
Impact factor JCR
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2,699 |
Impact info
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Datos JCR del año 2011 |
Volume
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66 |
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Journal number
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From page
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327 |
To page
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330 |
Month
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SIN MES |
Ranking
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