Observatorio de I+D+i UPM

Descripción
Here we report on the study of nano-crack formation in Al1?xInxN/AlN/GaN heterostructures, on its association with composition fluctuation and on its local electrical properties. It is shown here that indium segregation at nano-cracks and threading dislocations originating from the non-pseudomorphic AlN interlayer could be the cause of the high reverse-bias gate leakage current of Ni/Au Schottky contacts on Al1?xInxN/AlN/GaN heterostructures and significantly affects the contact rectifying behavior. Segregation of indium around crack tips in Al1?xInxN acting as conductive paths was assessed with conductive atomic force microscopy.
Internacional	Si
JCR del ISI	Si
Título de la revista	Scripta Materialia
ISSN	1359-6462
Factor de impacto JCR	2,699
Información de impacto	Datos JCR del año 2011
Volumen	66
DOI
Número de revista
Desde la página	327
Hasta la página	330
Mes	SIN MES
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• Autor: albert minj (Department of Physics, University of Bologna)
• Autor: Daniela Cavalcoli (Department of Physics, University of Bologna)
• Autor: saurabh pandey (Department of Physics, University of Bologna)
• Autor: Beatrice Fraboni (Department of Physics, University of Bologna)
• Autor: Anna Cavallini (Department of Physics, University of Bologna)
• Autor: Tommaso Brazzini . (UPM)
• Autor: Fernando Calle Gomez (UPM)

• Creador: Departamento: Ingeniería Electrónica