Memorias de investigación
Research Publications in journals:
A comprehensive diagram to grow metal-polarity InGaN alloys by molecular beam epitaxy
Year:2012

Research Areas
  • Electronics engineering

Information
Abstract
The composition,strainandsurfacemorphologyof(0001)InGaNlayersareinvestigatedasafunctionof growth temperature(460?645 1C) andimpingingInflux.Threedifferentgrowthregimes:nitrogen-rich, metal-richandintermediatemetal-rich,areclearlyidentifiedandfoundtobeincorrelationwith surface morphologyandstrainrelaxation.
International
Si
JCR
No
Title
Applied physics letters
ISBN
0003-6951
Impact factor JCR
0
Impact info
Volume
Journal number
From page
123
To page
127
Month
SIN MES
Ranking
Participants

Research Group, Departaments and Institutes related
  • Creador: Departamento: Ingeniería Electrónica