Memorias de investigación
Research Publications in journals:
Impact of N2 plasma power discharge on AlGaN/GaN HEMT performance
Year:2012
Research Areas
  • Engineering,
  • Electronic technology and of the communications,
  • Electric engineers, electronic and automatic (eil)
Information
Abstract
The effects of power and time conditions of in situ N2 plasma treatment, prior to silicon nitride (SiN) passivation, were investigated on an AlGaN/GaN high-electron mobility transistor (HEMT). These studies reveal that N2 plasma power is a critical parameter to control the SiN/AlGaN interface quality, which directly affects the 2-D electron gas density. Significant enhancement in the HEMT characteristics was observed by using a low power N2 plasma pretreatment.
International
Si
JCR
Si
Title
Ieee Transactions on Electron Devices
ISBN
0018-9383
Impact factor JCR
2,318
Impact info
Volume
Journal number
From page
374
To page
379
Month
FEBRERO
Ranking
Participants
Research Group, Departaments and Institutes related
  • Creador: Departamento: Ingeniería Electrónica