Abstract
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The effects of power and time conditions of in situ N2 plasma treatment, prior to silicon nitride (SiN) passivation, were investigated on an AlGaN/GaN high-electron mobility transistor (HEMT). These studies reveal that N2 plasma power is a critical parameter to control the SiN/AlGaN interface quality, which directly affects the 2-D electron gas density. Significant enhancement in the HEMT characteristics was observed by using a low power N2 plasma pretreatment. | |
International
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Si |
JCR
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Si |
Title
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Ieee Transactions on Electron Devices |
ISBN
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0018-9383 |
Impact factor JCR
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2,318 |
Impact info
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Volume
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Journal number
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From page
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374 |
To page
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379 |
Month
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FEBRERO |
Ranking
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