Descripción
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The effects of power and time conditions of in situ N2 plasma treatment, prior to silicon nitride (SiN) passivation, were investigated on an AlGaN/GaN high-electron mobility transistor (HEMT). These studies reveal that N2 plasma power is a critical parameter to control the SiN/AlGaN interface quality, which directly affects the 2-D electron gas density. Significant enhancement in the HEMT characteristics was observed by using a low power N2 plasma pretreatment. | |
Internacional
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Si |
JCR del ISI
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Si |
Título de la revista
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Ieee Transactions on Electron Devices |
ISSN
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0018-9383 |
Factor de impacto JCR
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2,318 |
Información de impacto
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Volumen
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DOI
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Número de revista
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Desde la página
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374 |
Hasta la página
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379 |
Mes
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FEBRERO |
Ranking
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