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Descripción
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| New forms of silicon may give rise to novel electronic properties. One striking case is that of Si clathrates, polymorphs of Si having fourfold connected frameworks with internal nanocavities which are known since decades and have later received attention due to their superconducting and thermoelectric properties; synthesis methods able to obtain them in thin film form have been recently reported. Here we show that they can lead to materials presenting inside the bandgap an intermediate band (IB) of the kind claimed to lead to high efficiencies in photovoltaic (PV) cells by allowing electron excitation from the valence band to the conduction band in two steps, using two photons of sub-bandgap energy | |
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Internacional
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Si |
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Nombre congreso
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Materials Research Society, Spring Meeting. |
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Tipo de participación
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960 |
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Lugar del congreso
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San Francisco, California, USA |
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Revisores
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Si |
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ISBN o ISSN
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000-0000-000-000 |
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DOI
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Fecha inicio congreso
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25/04/2012 |
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Fecha fin congreso
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29/04/2012 |
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Desde la página
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1 |
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Hasta la página
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1 |
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Título de las actas
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Procceding of Materials Research Society, Spring Meeting 2012 |