Memorias de investigación
Communications at congresses:
Investigation of AlInN barrier ISFET structures with GaN capping for pH detection
Year:2012

Research Areas
  • Sensor devices

Information
Abstract
In the last decade the interest in nitride-based sensors (gas, ions...) and bio-sensors is increased. In the case of ion sensitive FET (ISFET), gate voltages induced by ions adsorbed onto the gate region modulate the source-drain currents.
International
Si
Congress
International Workshop on Nitride Semiconductors (IWN2012)
960
Place
Sapporo (Japan)
Reviewers
Si
ISBN/ISSN
000-0-0000-0000-0
Start Date
14/10/2012
End Date
19/10/2012
From page
1
To page
3
Actas del IWN2012
Participants

Research Group, Departaments and Institutes related
  • Creador: Departamento: Ingeniería Electrónica