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Descripción
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| Zinc Oxide (ZnO) is a transparent semiconductor with a bandgap of 3.2 eV and large exciton binding energy (60 meV). The band gap of ZnO can be reduced (extended to the visible range) alloying with Cd or prolonged to UV by alloying with Mg. So ZnO is a prospective candidate for a variety of light emission applications such as light emitting diodes and laser diodes.In order to understand this experimental fact theoretical calculations were made using the Density Funtional Theory (DFT). | |
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Internacional
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Si |
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Nombre congreso
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European Material Research Conference (EMRS2011-Fall Meeting); Symposium H, |
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Tipo de participación
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960 |
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Lugar del congreso
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Warsaw, Poland |
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Revisores
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Si |
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ISBN o ISSN
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000-0000-000-000 |
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DOI
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Fecha inicio congreso
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17/09/2012 |
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Fecha fin congreso
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21/09/2012 |
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Desde la página
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1 |
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Hasta la página
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1 |
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Título de las actas
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Procc. of EMRS2011-Fall Meeting Symposium H 2012, |