Memorias de investigación
Communications at congresses:
Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures
Year:2012

Research Areas
  • Technology of devices for engineering

Information
Abstract
Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures
International
Si
Congress
International Workshop on Nitride Semiconductors (IWN2012).
960
Place
Sapporo (Japan)
Reviewers
Si
ISBN/ISSN
000-0-0000-0000-0
Start Date
14/10/2012
End Date
19/10/2012
From page
1
To page
3
Actas del IWN2012
Participants
  • Autor: Tommaso Brazzini . UPM
  • Autor: Marko Jak Tadjer . UPM
  • Autor: Zarko Gacevic UPM
  • Autor: Saurabh Pandey Department of Physics, University of Bologna
  • Autor: Anna Cavallini Department of Physics, University of Bologna
  • Autor: Fernando Calle Gomez UPM

Research Group, Departaments and Institutes related
  • Creador: Departamento: Ingeniería Electrónica