Abstract
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|
---|---|
Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures | |
International
|
Si |
Congress
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International Workshop on Nitride Semiconductors (IWN2012). |
|
960 |
Place
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Sapporo (Japan) |
Reviewers
|
Si |
ISBN/ISSN
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000-0-0000-0000-0 |
|
|
Start Date
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14/10/2012 |
End Date
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19/10/2012 |
From page
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1 |
To page
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3 |
|
Actas del IWN2012 |