Communications at congresses:
Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures
Year:2012
Research Areas
- Technology of devices for engineering
Information
|
Abstract
|
|
|---|---|
| Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures | |
|
International
|
Si |
|
Congress
|
International Workshop on Nitride Semiconductors (IWN2012). |
|
|
960 |
|
Place
|
Sapporo (Japan) |
|
Reviewers
|
Si |
|
ISBN/ISSN
|
000-0-0000-0000-0 |
|
|
|
|
Start Date
|
14/10/2012 |
|
End Date
|
19/10/2012 |
|
From page
|
1 |
|
To page
|
3 |
|
|
Actas del IWN2012 |
Open Access publication
Participants
- Autor: Tommaso Brazzini . UPM
- Autor: Marko Jak Tadjer . UPM
- Autor: Zarko Gacevic UPM
- Autor: Saurabh Pandey Department of Physics, University of Bologna
- Autor: Anna Cavallini Department of Physics, University of Bologna
- Autor: Fernando Calle Gomez UPM
Research Group, Departaments and Institutes related
- Creador: Departamento: Ingeniería Electrónica