Memorias de investigación
Communications at congresses:
Photoresponse of metal-semiconductor-metal InAlGaN/GaN structures
Year:2012

Research Areas
  • Other electronic devices,
  • Photon light receptor devices

Information
Abstract
Photoresponse of metal-semiconductor-metal InAlGaN/GaN structures
International
Si
Congress
International Workshop on Nitride Semiconductors (IWN2012)
960
Place
Reviewers
Si
ISBN/ISSN
000-0-0000-0000-0
Start Date
14/10/2012
End Date
19/10/2012
From page
1
To page
3
Actas del IWN2012
Participants
  • Autor: Tommaso Brazzini . UPM
  • Autor: Saurabh Pandey Department of Physics, University of Bologna
  • Autor: Fatima Romero Rojo UPM
  • Autor: Pavel Yu. Bokov Faculty of Physics, Moscow State University
  • Autor: Martin Feneberg Institut fur Experimentelle Physik, Otto-von-Guericke-Universitat Magdeburg
  • Autor: Gema Tabares Jimenez UPM
  • Autor: Anna Cavallini Department of Physics, University of Bologna
  • Autor: Ruediger Goldhahn Institut fur Experimentelle Physik, Otto-von-Guericke-Universitat Magdeburg
  • Autor: Fernando Calle Gomez UPM

Research Group, Departaments and Institutes related
  • Creador: Departamento: Ingeniería Electrónica