Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
Effect of Sb incorporation on the electronic structure of InAs quantum dots
Year:2013
Research Areas
  • Engineering
Information
Abstract
On the basis of optical characterization experiments and an eight band kp model, we have studied the effect of Sb incorporation on the electronic structure of InAs quantum dots (QDs). We have found that Sb incorporation in InAs QDs shifts the hole wave function to the center of the QD from the edges of the QD where it is otherwise pinned down by the effects of shear stress. The observed changes in the ground-state energy cannot merely be explained by a composition change upon Sb exposure but can be accounted for when the change in lateral size is taken into consideration. The Sb distribution inside the QDs produces distinctive changes in the density of states, particularly, in the separation between excitation shells. We find a 50% increase in the thermal escape activation energy compared with reference InAs quantum dots as well as an increment of the fundamental transition decay time with Sb incorporation. Furthermore, we find that Sb incorporation into quantum dots is strongly nonlinear with coverage, saturating at low doses. This suggests the existence of a solubility limit of the Sb incorporation into the quantum dots during growth.
International
Si
JCR
Si
Title
PHYSICAL REVIEW B
ISBN
1550-235X
Impact factor JCR
Impact info
Volume
88
10.1103/PhysRevB.88.085308
Journal number
085308
From page
1
To page
6
Month
SIN MES
Ranking
Participants
  • Autor: A. G. (Instituto de Microelectronica de Madrid, CNM (CSIC))
  • Autor: J.M. Llorens (Instituto de Microelectronica de Madrid, CNM (CSIC))
  • Autor: D. Alonso-Alvarez (Instituto de Microelectronica de Madrid, CNM (CSIC))
  • Autor: B. alén (Instituto de Microelectronica de Madrid, CNM (CSIC))
  • Autor: Antonio Juan Rivera de Mena (UPM)
  • Autor: Y. González (Instituto de Microelectronica de Madrid, CNM (CSIC))
  • Autor: J.M. Ripalda (Instituto de Microelectronica de Madrid, CNM (CSIC))
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Fusión Nuclear Inercial y Tecnología de fusión
  • Centro o Instituto I+D+i: Instituto de Fusión Nuclear
  • Departamento: Ingeniería Nuclear
S2i 2021 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)