Memorias de investigación
Artículos en revistas:
Effect of Sb incorporation on the electronic structure of InAs quantum dots
Año:2013
Áreas de investigación
  • Ingenierías
Datos
Descripción
On the basis of optical characterization experiments and an eight band kp model, we have studied the effect of Sb incorporation on the electronic structure of InAs quantum dots (QDs). We have found that Sb incorporation in InAs QDs shifts the hole wave function to the center of the QD from the edges of the QD where it is otherwise pinned down by the effects of shear stress. The observed changes in the ground-state energy cannot merely be explained by a composition change upon Sb exposure but can be accounted for when the change in lateral size is taken into consideration. The Sb distribution inside the QDs produces distinctive changes in the density of states, particularly, in the separation between excitation shells. We find a 50% increase in the thermal escape activation energy compared with reference InAs quantum dots as well as an increment of the fundamental transition decay time with Sb incorporation. Furthermore, we find that Sb incorporation into quantum dots is strongly nonlinear with coverage, saturating at low doses. This suggests the existence of a solubility limit of the Sb incorporation into the quantum dots during growth.
Internacional
Si
JCR del ISI
Si
Título de la revista
PHYSICAL REVIEW B
ISSN
1550-235X
Factor de impacto JCR
Información de impacto
Volumen
88
DOI
10.1103/PhysRevB.88.085308
Número de revista
085308
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1
Hasta la página
6
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Participantes
  • Autor: A. G. Instituto de Microelectronica de Madrid, CNM (CSIC)
  • Autor: J.M. Llorens Instituto de Microelectronica de Madrid, CNM (CSIC)
  • Autor: D. Alonso-Alvarez Instituto de Microelectronica de Madrid, CNM (CSIC)
  • Autor: B. alén Instituto de Microelectronica de Madrid, CNM (CSIC)
  • Autor: Antonio Juan Rivera de Mena UPM
  • Autor: Y. González Instituto de Microelectronica de Madrid, CNM (CSIC)
  • Autor: J.M. Ripalda Instituto de Microelectronica de Madrid, CNM (CSIC)
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Fusión Nuclear Inercial y Tecnología de fusión
  • Centro o Instituto I+D+i: Instituto de Fusión Nuclear
  • Departamento: Ingeniería Nuclear