Abstract
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We demonstrate 1.81?eV GaInP solar cells approaching the Shockley-Queisser limit with 20.8% solar conversion efficiency, 8% external radiative efficiency, and 80?90% internal radiative efficiency at one-sun AM1.5 global conditions. Optically enhanced voltage through photon recycling that improves light extraction was achieved using a back metal reflector. This optical enhancement was realized at one-sun currents when the non-radiative Sah-Noyce-Shockley junction recombination current was reduced by placing the junction at the back of the cell in a higher band gap AlGaInP layer. Electroluminescence and dark current-voltage measurements show the separate effects of optical management and non-radiative dark current reduction. | |
International
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Si |
JCR
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Si |
Title
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APPLIED PHYSICS LETTERS |
ISBN
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0003-6951 |
Impact factor JCR
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3,844 |
Impact info
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Volume
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103 |
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10.1063/1.4816837 |
Journal number
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4 |
From page
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0 |
To page
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5 |
Month
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SIN MES |
Ranking
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0 |