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Descripción
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| GaInP nucleation on Ge(100) often starts by annealing of the Ge(100) substrates under supply of phosphorus precursors. However, the influence on the Ge surface is not well understood. Here, we studied vicinal Ge(100) surfaces annealed under tertiarybutylphosphine (TBP) supply in MOVPE by in situ reflection anisotropy spectroscopy (RAS), X-ray photoelectron spectroscopy (XPS), and low energy electron diffraction (LEED). While XPS reveals a P termination and the presence of carbon on the Ge surface, LEED patterns indicate a disordered surface probably due to by-products of the TBP pyrolysis. However, the TBP annealed Ge(100) surface exhibits a characteristic RA spectrum, which is related to the P termination. RAS allows us to in situ control phosphorus desorption dependent on temperature. (C) 2012 Elsevier B.V. All rights reserved. | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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JOURNAL OF CRYSTAL GROWTH |
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ISSN
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0022-0248 |
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Factor de impacto JCR
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1,726 |
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Información de impacto
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Volumen
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370 |
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DOI
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10.1016/j.jcrysgro.2012.07.046 |
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Número de revista
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Desde la página
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173 |
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Hasta la página
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176 |
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Mes
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MAYO |
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Ranking
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0 |