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Memorias de investigación
Artículos en revistas:
Effects of Internal Luminescence and Internal Optics on V-oc and J(sc) of III-V Solar Cells
Año:2013
Áreas de investigación
  • Tecnología electrónica y de las comunicaciones
Datos
Descripción
For solar cells dominated by radiative recombination, the performance can be significantly enhanced by improving the internal optics. Internally radiated photons can be directly emitted from the cell, but if confined by good internal reflectors at the front and back of the cell they can also be re-absorbed with a significant probability. This so-called photon recycling leads to an increase in the equilibrium minority carrier concentration and therefore the open-circuit voltage, Voc. In multijunction cells, the internal luminescence from a particular junction can also be coupled into a lower bandgap junction where it generates photocurrent in addition to the externally generated photocurrent, and affects the overall performance of the tandem. We demonstrate and discuss the implications of a detailed model that we have developed for real, non-idealized solar cells that calculates the external luminescent efficiency, accounting for wavelength-dependent optical properties in each layer, parasitic optical and electrical losses, multiple reflections within the cell and isotropic internal emission. The calculation leads to Voc, and we show data on high quality GaAs cells that agree with the trends in the model as the optics are systematically varied. For multijunction cells the calculation also leads to the luminescent coupling efficiency, and we show data on GaInP/GaAs tandems where the trends also agree as the coupling is systematically varied. In both cases, the effects of the optics are most prominent in cells with good material quality. The model is applicable to any solar cell for which the optical properties of each layer are well-characterized, and can be used to explore a wide phase space of design for single junction and multijunction solar cells.
Internacional
Si
JCR del ISI
Si
Título de la revista
IEEE JOURNAL OF PHOTOVOLTAICS
ISSN
2156-3381
Factor de impacto JCR
0
Información de impacto
Volumen
3
DOI
10.1109/JPHOTOV.2013.2278666
Número de revista
4
Desde la página
1437
Hasta la página
1442
Mes
OCTUBRE
Ranking
0
Esta actividad pertenece a memorias de investigación
Participantes
  • Autor: myles a. steiner
  • Autor: john f. geisz
  • Autor: Ivan Garcia Vara (UPM)
  • Autor: daniel j. friedman
  • Autor: anna duda
  • Autor: waldo j. olavarria
  • Autor: michelle young
  • Autor: darius kuciauskas
  • Autor: sarah r. kurtz
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Semiconductores III-V
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