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Memorias de investigación
Artículos en revistas:
Understanding phosphorus diffusion into silicon in a MOVPE environment for III-V on silicon solar cells
Año:2013
Áreas de investigación
  • Tecnología electrónica y de las comunicaciones
Datos
Descripción
Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III?V materials on silicon for photovoltaic applications. When manufacturing a multi-junction solar cell on silicon, one of the first processes to be addressed is the development of the bottom subcell and, in particular, the formation of its emitter. In this study, we analyze, both experimentally and by simulations, the formation of the emitter as a result of phosphorus diffusion that takes place during the first stages of the epitaxial growth of the solar cell. Different conditions for the Metal-Organic Vapor Phase Epitaxy (MOVPE) process have been evaluated to understand the impact of each parameter, namely, temperature, phosphine partial pressure, time exposure and memory effects in the final diffusion profiles obtained. A model based on SSupremIV process simulator has been developed and validated against experimental profiles measured by ECV and SIMS to calculate P diffusion profiles in silicon formed in a MOVPE environment taking in consideration all these factors.
Internacional
Si
JCR del ISI
Si
Título de la revista
Solar Energy Materials And Solar Cells
ISSN
0927-0248
Factor de impacto JCR
4,63
Información de impacto
Volumen
116
DOI
10.1016/j.solmat.2013.04.003
Número de revista
Desde la página
61
Hasta la página
67
Mes
SIN MES
Ranking
0
Esta actividad pertenece a memorias de investigación
Participantes
  • Autor: Elisa Garcia-Tabares Valdivieso (UPM)
  • Autor: diego martin
  • Autor: Ivan Garcia Vara (UPM)
  • Autor: Ignacio Rey-Stolle Prado (UPM)
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física
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