Artículos en revistas:
Understanding phosphorus diffusion into silicon in a MOVPE environment for III-V on silicon solar cells
Understanding phosphorus diffusion into silicon in a MOVPE environment for III-V on silicon solar cells
Año:2013
Áreas de investigación
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Tecnología electrónica y de las comunicaciones
Datos
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Descripción
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| Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III?V materials on silicon for photovoltaic applications. When manufacturing a multi-junction solar cell on silicon, one of the first processes to be addressed is the development of the bottom subcell and, in particular, the formation of its emitter. In this study, we analyze, both experimentally and by simulations, the formation of the emitter as a result of phosphorus diffusion that takes place during the first stages of the epitaxial growth of the solar cell. Different conditions for the Metal-Organic Vapor Phase Epitaxy (MOVPE) process have been evaluated to understand the impact of each parameter, namely, temperature, phosphine partial pressure, time exposure and memory effects in the final diffusion profiles obtained. A model based on SSupremIV process simulator has been developed and validated against experimental profiles measured by ECV and SIMS to calculate P diffusion profiles in silicon formed in a MOVPE environment taking in consideration all these factors. | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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Solar Energy Materials And Solar Cells |
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ISSN
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0927-0248 |
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Factor de impacto JCR
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4,63 |
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Información de impacto
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Volumen
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116 |
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DOI
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10.1016/j.solmat.2013.04.003 |
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Número de revista
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Desde la página
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61 |
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Hasta la página
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67 |
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Mes
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SIN MES |
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Ranking
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0 |
Participantes
- Autor: Elisa Garcia-Tabares Valdivieso (UPM)
- Autor: diego martin
- Autor: Ivan Garcia Vara (UPM)
- Autor: Ignacio Rey-Stolle Prado (UPM)
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
- Creador: Grupo de Investigación: Semiconductores III-V
- Centro o Instituto I+D+i: Instituto de Energía Solar
- Departamento: Electrónica Física
S2i 2023 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)