Memorias de investigación
Research Publications in journals:
Understanding phosphorus diffusion into silicon in a MOVPE environment for III-V on silicon solar cells
Year:2013

Research Areas
  • Electronic technology and of the communications

Information
Abstract
Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III?V materials on silicon for photovoltaic applications. When manufacturing a multi-junction solar cell on silicon, one of the first processes to be addressed is the development of the bottom subcell and, in particular, the formation of its emitter. In this study, we analyze, both experimentally and by simulations, the formation of the emitter as a result of phosphorus diffusion that takes place during the first stages of the epitaxial growth of the solar cell. Different conditions for the Metal-Organic Vapor Phase Epitaxy (MOVPE) process have been evaluated to understand the impact of each parameter, namely, temperature, phosphine partial pressure, time exposure and memory effects in the final diffusion profiles obtained. A model based on SSupremIV process simulator has been developed and validated against experimental profiles measured by ECV and SIMS to calculate P diffusion profiles in silicon formed in a MOVPE environment taking in consideration all these factors.
International
Si
JCR
Si
Title
Solar Energy Materials And Solar Cells
ISBN
0927-0248
Impact factor JCR
4,63
Impact info
Volume
116
10.1016/j.solmat.2013.04.003
Journal number
From page
61
To page
67
Month
SIN MES
Ranking
0
Participants

Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física