Artículos en revistas:
Influence of PH3 exposure on silicon substrate morphology in the MOVPE growth of III-V on silicon multijunction solar cells
Influence of PH3 exposure on silicon substrate morphology in the MOVPE growth of III-V on silicon multijunction solar cells
Año:2013
Áreas de investigación
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Tecnología electrónica y de las comunicaciones
Datos
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Descripción
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| Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on silicon for photovoltaic applications. One of the first issues to be considered in the development of this structure will be the strategy to create the silicon emitter of the bottom subcell. In this study, we explore the possibility of forming the silicon emitter by phosphorus diffusion (i.e. exposing the wafer to PH3 in a MOVPE reactor) and still obtain good surface morphologies to achieve a successful III-V heteroepitaxy as occurs in conventional III-V on germanium solar cell technology. Consequently, we explore the parameter space (PH3 partial pressure, time and temperature) that is needed to create optimized emitter designs and assess the impact of such treatments on surface morphology using atomic force microscopy. Although a strong degradation of surface morphology caused by prolonged exposure of silicon to PH3 is corroborated, it is also shown that subsequent anneals under H-2 can recover silicon surface morphology and minimize its RMS roughness and the presence of pits and spikes. | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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JOURNAL OF PHYSICS D-APPLIED PHYSICS |
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ISSN
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0022-3727 |
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Factor de impacto JCR
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2,544 |
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Información de impacto
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Volumen
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46 |
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DOI
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10.1088/0022-3727/46/44/445104 |
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Número de revista
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44 |
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Desde la página
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0 |
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Hasta la página
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7 |
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Mes
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SIN MES |
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Ranking
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0 |
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Participantes
- Autor: Elisa Garcia-Tabares Valdivieso (UPM)
- Autor: Ivan Garcia Vara (UPM)
- Autor: d. martin
- Autor: Ignacio Rey-Stolle Prado (UPM)
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
- Creador: Grupo de Investigación: Semiconductores III-V
- Centro o Instituto I+D+i: Instituto de Energía Solar
- Departamento: Electrónica Física
S2i 2023 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)