Descripción
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This article presents a wide band compact high isolation photoconductive switch, which is based on the series-shunt switch design with three photoconductive switches made of diced high-resistivity silicon wafer placed over a microstrip gap and activated by 808-nm near-infrared laser diodes. The switch shows an insertion loss of 1.2 dB and an isolation of 44.8 dB at 2 GHz. It is easy to operate and control by light, high-speed, electromagnetically transparent and it does not require any biasing circuits | |
Internacional
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Si |
JCR del ISI
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Si |
Título de la revista
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Microwave And Optical Technology Letters |
ISSN
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0895-2477 |
Factor de impacto JCR
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0,585 |
Información de impacto
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Datos JCR del año 2012 |
Volumen
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55 |
DOI
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10.1002/mop.27507 |
Número de revista
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5 |
Desde la página
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1168 |
Hasta la página
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1170 |
Mes
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MAYO |
Ranking
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