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Descripción
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| The present invention relates to a solar cell and to a method of manufacturing thereof, the solar cell comprising: a layer of an n-doped semiconductor, a layer of a p-doped semiconductor and an intermediate band layer being disposed between the n-doped and the p-doped semiconductor layers, the intermediate band layer comprising: an amorphous semiconducting host material, a plurality of colloidal quantum dots embedded in the host material and substantially uniformly distributed therein, each quantum dot comprising a core surrounded by a shell, the shell comprising a material having a higher bandgap than that of the host material, and a plurality of metal nanoparticles embedded in the host material and located at least in a plane where a plurality of quantum dots are distributed. | |
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Internacional
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Si |
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Estado
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Solicitada |
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Referencia Patente Prioritaria
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US 13/648,757 |
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En explotación
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No |
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Licenciatarios
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UNIVERSIDAD POLITÉCNICA DE MADRID |
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Fecha solicitud
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18/04/2013 |
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Titulares aparte de la UPM
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