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Descripción
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| Silicon oxide films with excess of Si were deposited by Low Pressure Chemical Vapor Deposition. The growth rate of the films and the excess of silicon in them have been modeled using a Face-centered Central Composite Design experiment. Samples annealed at 1100 ºC show luminescence (665 nm) at 80K and at room temperature associated to Si nanocrystals. | |
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Internacional
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Si |
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Nombre congreso
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2007 MRS Spring Meeting. Symposium A |
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Tipo de participación
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960 |
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Lugar del congreso
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San Francisco (EE.UU.) |
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Revisores
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Si |
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ISBN o ISSN
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DOI
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Fecha inicio congreso
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09/04/2007 |
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Fecha fin congreso
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13/04/2007 |
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Desde la página
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Título de las actas
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