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Descripción
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| High power short optical pulses (tens of ps) directly generated by semiconductor lasers are of high interest for different applications. The pulses are usually generated by gain switching, mode-locking, or Q-switching. Tapered lasers with separate injection of the ridge waveguide (RW) and tapered sections have demonstrated very high cw power levels and are promising devices for short pulse generation because of the possibility of driving their dynamics by a low current injection in the RW section. In order to understand the underlying physics and to optimize the laser geometry it is important to develop simple simulation tools for the analysis of the laser dynamics. In this work we use a simplified three-rate-equation (RE) model proposed by our group and apply it to the analysis of gain switching in devices with different geometries. | |
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Internacional
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Si |
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Nombre congreso
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42th International School and Conference on the Physics of Semiconductors, Jaszowiec 2013 |
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Tipo de participación
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960 |
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Lugar del congreso
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Wista, Poland |
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Revisores
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Si |
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ISBN o ISSN
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0000-0000 |
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DOI
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Fecha inicio congreso
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22/06/2013 |
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Fecha fin congreso
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27/06/2013 |
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Desde la página
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219 |
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Hasta la página
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219 |
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Título de las actas
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42th International School and Conference on the Physics of Semiconductors, Jaszowiec 2013 |