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Memorias de investigación
Artículos en revistas:
Direct comparison of the gravimetric responsivities of ZnO-based FBARs and SMRs
Año:2013
Áreas de investigación
  • Ingenierías,
  • Tecnología electrónica y de las comunicaciones
Datos
Descripción
Film bulk acoustic resonators (FBARs) and solidly mounted resonators (SMRs) have the potential to sig-nificantly improve upon the sensitivity and minimum detection limit of traditional gravimetric sensorsbased on quartz crystal microbalances (QCMs) and surface acoustic wave resonators (SAWs). To date, nei-ther FBAR nor SMR devices have been demonstrated to be superior to the other; hence the choice betweenthem depends primarily on the users? ability to design/fabricate membranes and/or Bragg reflectors. Inthis work, it is shown that identically designed FBAR and SMR devices resonating at the same frequencyexhibit different responsivities to mass loadings, Rm, and that the SMRs are less responsive than theFBARs. For the specific device design and resonant frequency (?2 GHz) of the resonators presented here,the FBARs? mass responsivity is ?20% greater than that of the SMRs?, and although this value is not uni-versal for all possible device designs, it clearly shows that FBAR devices should be favoured over SMRs ingravimetric sensing applications where the FBARs? fragility is not an issue. Numerical calculations basedon Mason?s model offer an insight into the physical mechanisms behind the greater FBARs responsivity,and it was shown that the Bragg reflector has an effect on the acoustic load at one of the facets of thepiezoelectric films which is in turn responsible for the SMRs? lower responsivity to mass loadings.
Internacional
Si
JCR del ISI
Si
Título de la revista
SENSORS AND ACTUATORS B-CHEMICAL
ISSN
0925-4005
Factor de impacto JCR
3,898
Información de impacto
Volumen
183
DOI
10.1016/j.snb.2013.03.085
Número de revista
Desde la página
136
Hasta la página
143
Mes
SIN MES
Ranking
0
Esta actividad pertenece a memorias de investigación
Participantes
  • Autor: L. Garcia Gancedo
  • Autor: Jorge Pedros Ayala (UPM)
  • Autor: Enrique Iborra Grau (UPM)
  • Autor: Marta Clement Lorenzo (UPM)
  • Autor: Jimena Olivares Roza (UPM)
  • Autor: José Capilla Osorio (UPM)
  • Autor: J.K Luo
  • Autor: J.R. Lu
  • Autor: WI Milne
  • Autor: A.J. Flewitt
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Microsistemas y Materiales Electrónicos
  • Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología
  • Grupo de Investigación: Grupo de Dispositivos Semiconductores del ISOM
  • Centro o Instituto I+D+i: Centro de Materiales y Dispositivos Avanzados para Tecnologías de Información y Comunicaciones
  • Departamento: Tecnología Electrónica
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