Memorias de investigación
Research Publications in journals:
Gate oxide stability of 4H-SiC MOSFETs under on/off-state bias-temperature stress
Year:2013

Research Areas

Information
Abstract
0
International
Si
JCR
Si
Title
SILICON CARBIDE AND RELATED MATERIALS 2012
ISBN
0255-5476
Impact factor JCR
0
Impact info
Volume
740-742
10.4028/www.scientific.net/MSF.740-742.553
Journal number
From page
553
To page
556
Month
Ranking
0
Participants
  • Autor: marko j. tadjer UPM
  • Autor: s. martin-horcajo UPM
  • Autor: a. bosca UPM
  • Autor: f. calle UPM
  • Autor: jose millan UPM

Research Group, Departaments and Institutes related
  • Creador: No seleccionado
  • Departamento: Ingeniería Electrónica