Memorias de investigación
Research Publications in journals:
Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy
Year:2013

Research Areas

Information
Abstract
0
International
Si
JCR
Si
Title
APPLIED PHYSICS LETTERS
ISBN
0003-6951
Impact factor JCR
3,844
Impact info
Volume
103
10.1063/1.4813862
Journal number
3
From page
0
To page
4
Month
Ranking
0
Participants
  • Autor: s. martin-horcajo UPM
  • Autor: a. sasikumar
  • Autor: m. f. romero UPM
  • Autor: a. r. arehart
  • Autor: f. calle UPM
  • Autor: m. j. tadjer UPM
  • Autor: y. pei
  • Autor: d. brown
  • Autor: f. recht
  • Autor: m. a. di forte-poisson
  • Autor: s. keller
  • Autor: s. p. denbaars
  • Autor: u. k. mishra
  • Autor: s. a. ringel

Research Group, Departaments and Institutes related
  • Creador: No seleccionado
  • Departamento: Ingeniería Electrónica