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Abstract
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|---|---|
| The strength of quasi-monocrystalline silicon wafers has been studied. The study has been carried out employing the four line bending test and simulating them by means of FE models. For the analysis, failure stresses were fitted to a three-parameter Weibull distribution. | |
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International
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Si |
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JCR
|
Si |
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Title
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Progress in Photovoltaics |
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ISBN
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1062-7995 |
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Impact factor JCR
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9,696 |
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Impact info
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Datos JCR del año 2013 |
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Volume
|
22 |
|
|
10.1002/pip.2372, 2013 |
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Journal number
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12 |
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From page
|
1204 |
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To page
|
1212 |
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Month
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DICIEMBRE |
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Ranking
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Q1 |