Memorias de investigación
Artículos en revistas:
Advances on MBE Selective Area Growth of III-Nitride nanostructures: from nanoLEDs to pseudo substrates
Año:2014
Áreas de investigación
  • Fisica sb -- semiconductores y estructura de bandas
Datos
Descripción
The aim of this work is to provide an overview on the recent advances in the selective area growth (SAG) of (In)GaN nanostructures by plasma assisted molecular beam epitaxy, focusing on their potential as building blocks for next generation LEDs. The first three sections deal with the basic growth mechanisms of GaN SAG and the emission control in the entire ultraviolet to infrared range, including approaches for white light emission, using InGaN disks and thick segments on axial nanocolumns. SAG of axial nanostructures is eveloped on both GaN/sapphire templates and GaN-buffered Si(111). As an alternative to axial nanocolumns, section 4 reports on the growth and characterization of InGaN/GaN core-shell structures on an ordered array of top-down patterned GaN microrods. Finally, section 5 reports on the SAG of GaN, with and without InGaN insertion, on semi-polar (11-22) and non-polar (11-20) templates. Upon SAG the high defect density present in the templates is strongly reduced as indicated by a dramatic improvement of the optical properties. In the case of SAG on nonpolar (11-22) templates, the formation of nanostructures with a low aspect ratio took place allowing for the fabrication of high-quality, non-polar GaN pseudo-templates by coalescence of these nanostructures.
Internacional
Si
JCR del ISI
No
Título de la revista
International Journal of High Speed Electronics and Systems
ISSN
1793-6438
Factor de impacto JCR
Información de impacto
Volumen
23
DOI
Número de revista
Desde la página
1450020-1
Hasta la página
1450020-38
Mes
SIN MES
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Participantes
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Grupo de Dispositivos Semiconductores del ISOM
  • Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología
  • Departamento: Ingeniería Electrónica