Memorias de investigación
Research Publications in journals:
Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range
Year:2014

Research Areas
  • Physics - Semiconductors and band structure

Information
Abstract
The growth of ordered arrays of InGaN/GaN nanocolumnar light emitting diodes by molecular beam epitaxy, emitting in the blue (441 nm), green (502 nm), and yellow (568 nm) spectral range is reported. The device active region, consisting of a nanocolumnar InGaN section of nominally constant composition and 250 to 500 nm length, is free of extended defects, which is in strong contrast to InGaN layers (planar) of similar composition and thickness. The devices are driven under pulsed operation up to 1300 A/cm2 without traces of efficiency droop. Electroluminescence spectra show a very small blue shift with increasing current, (almost negligible in the yellow device) and line widths slightly broader than those of state-of-the-art InGaN quantum wells.
International
Si
JCR
Si
Title
Nanotechnology
ISBN
0957-4484
Impact factor JCR
Impact info
Volume
25
Journal number
From page
435203-1
To page
435203-7
Month
SIN MES
Ranking
Participants
  • Autor: Ana Mª Bengoechea Encabo UPM
  • Autor: Steven Albert . UPM
  • Autor: David Lopez-Romero Moraleda UPM
  • Autor: Pierre Lefebvre CNRS¿Laboratoire Charles Coulomb (L2C)
  • Autor: Francesca Barbagini
  • Autor: Almudena Torres-Pardo Dept. Química Inorgánica, Universidad Complutense
  • Autor: Jose M. Gonzalez-Calbet Dept. Química Inorgánica, Universidad Complutense
  • Autor: Miguel Angel Sanchez Garcia UPM
  • Autor: Enrique Calleja Pardo UPM

Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Grupo de Dispositivos Semiconductores del ISOM
  • Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología
  • Departamento: Ingeniería Electrónica