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Descripción
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| In recent years, all the operating principles of intermediate band behaviour have been demonstrated in InAs/GaAs quantum dot (QD) solar cells. Having passed this hurdle, a new stage of research is underway, whose goal is to deliver QD solar cells with efficiencies above those of state-of-the-art single-gap devices. In this work, we demonstrate that this is possible, using the present InAs/GaAs QD system, if the QDs are made to be radiatively dominated, and if absorption enhancements are achieved by a combination of increasing the number of QDs and light trapping. A quantitative prediction is also made of the absorption enhancements required, suggesting that a 30 fold increase in the number of QDs and a light trapping enhancement of 10 are sufficient. Finally, insight is given into the relative merits of absorption enhancement via increasing QD numbers and via light trapping. | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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Solar Energy Materials And Solar Cells |
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ISSN
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0927-0248 |
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Factor de impacto JCR
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5,03 |
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Información de impacto
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Volumen
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130 |
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DOI
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Número de revista
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Desde la página
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225 |
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Hasta la página
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233 |
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Mes
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SIN MES |
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Ranking
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