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Descripción
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| A number of important but little-investigated problems connected with III-V/Ge heterostructure in the GaInP/GaInAs/Ge multijunction solar cells grown by MOVPE are considered in the paper. The opportunity for successfully applying the combination of reflectance and reflectance anisotropy spectroscopy in situ methods for investigating III-V structure growth on a Ge substrate has been demonstrated. Photovoltaic properties of the III-V/Ge narrow-band subcell of the triple-junction solar cells have been investigated. It has been shown that there are excess currents in the Ge photovoltaic p-n junctions, and they have the tunneling or thermotunneling character. The values of the diode parameters for these current flow mechanisms have been determined. The potential barrier at the III-V/Ge interface was determined and the origin of this barrier formation during MOVPE heterogrowth was suggested. | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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International Journal of Photoenergy |
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ISSN
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1110-662X |
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Factor de impacto JCR
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2,663 |
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Información de impacto
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Volumen
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2014 |
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DOI
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Número de revista
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Desde la página
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836284-1 |
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Hasta la página
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836284-10 |
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Mes
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SIN MES |
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Ranking
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