Descripción
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In the work, the results of an investigation of GaInP/GaInAs/Ge MJ SCs intended for converting concentrated solar radiation, when operating at low temperatures (down to -190 degrees C) are presented. A kink of the cell I-V characteristic has been observed in the region close to V-oc starting from -20 degrees C at operation under concentrated sunlight. The causes for its occurrence have been analyzed and the reasons for formation of a built-in potential barrier for majority charge carriers at the n-GaInP/n-Ge isotype hetero-interface are discussed. The effect of charge carrier transport in n-GaInP/n-p Ge heterostructures on MJ SC output characteristics at low temperatures has been studied including EL technique. | |
Internacional
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Si |
JCR del ISI
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No |
Título de la revista
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AIP Conference Proceedings |
ISSN
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0094-243X |
Factor de impacto JCR
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Información de impacto
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Volumen
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1616 |
DOI
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Número de revista
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Desde la página
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29 |
Hasta la página
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32 |
Mes
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SIN MES |
Ranking
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