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Artículos en revistas:
3-D modeling of perimeter recombination in GaAs diodes and its influence on concentrator solar cells

Año:2014

Áreas de investigación

Datos

Descripción
This paper describes a complete modelling of the perimeter recombination of GaAs diodes which solves most unknowns and suppresses the limitations of previous models. Because of the three dimensional nature of the implemented model, it is able to simulate real devices. GaAs diodes on two epiwafers with different base doping levels, sizes and geometries, namely square and circular are manufactured. The validation of the model is achieved by fitting the experimental measurements of the dark IV curve of the manufactured GaAs diodes. A comprehensive 3-D description of the occurring phenomena affecting the perimeter recombination is supplied with the help of the model. Finally, the model is applied to concentrator GaAs solar cells to assess the impact of their doping level, size and geometry on the perimeter recombination.
Internacional	Si
JCR del ISI	Si
Título de la revista	Solar Energy Materials And Solar Cells
ISSN	0927-0248
Factor de impacto JCR	5,03
Información de impacto
Volumen	120
DOI	10.1016/j.solmat.2013.08.009
Número de revista
Desde la página	48
Hasta la página	58
Mes	SIN MES
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