Memorias de investigación
Research Publications in journals:
3-D modeling of perimeter recombination in GaAs diodes and its influence on concentrator solar cells
Year:2014
Research Areas
  • Electric engineers, electronic and automatic (eil),
  • Electronic devices
Information
Abstract
This paper describes a complete modelling of the perimeter recombination of GaAs diodes which solves most unknowns and suppresses the limitations of previous models. Because of the three dimensional nature of the implemented model, it is able to simulate real devices. GaAs diodes on two epiwafers with different base doping levels, sizes and geometries, namely square and circular are manufactured. The validation of the model is achieved by fitting the experimental measurements of the dark IV curve of the manufactured GaAs diodes. A comprehensive 3-D description of the occurring phenomena affecting the perimeter recombination is supplied with the help of the model. Finally, the model is applied to concentrator GaAs solar cells to assess the impact of their doping level, size and geometry on the perimeter recombination.
International
Si
JCR
Si
Title
Solar Energy Materials And Solar Cells
ISBN
0927-0248
Impact factor JCR
5,03
Impact info
Volume
120
10.1016/j.solmat.2013.08.009
Journal number
From page
48
To page
58
Month
SIN MES
Ranking
Participants
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Departamento: Electrónica Física
  • Centro o Instituto I+D+i: Instituto de Energía Solar