Memorias de investigación
Research Publications in journals:
Highly conductive p++-AlGaAs/n++-GaInP tunnel junctions for operation up to 15,000 suns in concentrator solar cells
Year:2014
Research Areas
  • Electric engineers, electronic and automatic (eil),
  • Solar cells,
  • Technology of devices for engineering
Information
Abstract
In the last few decades there has been great interest in III-V multijunction solar cells (MJSC) for concentrator applications due to their promise to significantly reduce the cost of electricity. Being formed by series connection of several solar cells with different bandgaps, a key role in a MJSC structure is played by the tunnel junctions (TJ) aimed to implement such series connection. Essentially, tunnel junctions (tunnel diodes or Esaki diodes) are thin, heavily doped p?n junctions where quantum tunneling plays a key role as a conduction mechanism. Such devices were discovered by Nobel laureate Leo Esaki at the end of 1950. The key feature of tunnel junctions for their application in MJSC is that, as long as quantum tunneling is the dominant conduction mechanism, they exhibit a linear I?V dependence until the peak tunneling current (Jp) is reached. This initial ohmic region in the I?V curve is ideal for implementing low-loss interconnections between the subcells with different energy bandgaps that constitute a MJSC.
International
Si
JCR
No
Title
SEMICONDUCTOR TODAY: Compound & Advanced Silicon
ISBN
1752-2935
Impact factor JCR
Impact info
Volume
9
Journal number
8
From page
80
To page
81
Month
SIN MES
Ranking
Participants
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Departamento: Electrónica Física
  • Centro o Instituto I+D+i: Instituto de Energía Solar