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Descripción
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| In the work, the results of an investigation of GaInP/GaInAs/Ge MJ SCs intended for converting concentrated solar radiation, when operating at low temperatures (down to -190 degrees C) are presented. A kink of the cell I-V characteristic has been observed in the region close to V-oc starting from -20 degrees C at operation under concentrated sunlight. The causes for its occurrence have been analyzed and the reasons for formation of a built-in potential barrier for majority charge carriers at the n-GaInP/n-Ge isotype hetero-interface are discussed. The effect of charge carrier transport in n-GaInP/n-p Ge heterostructures on MJ SC output characteristics at low temperatures has been studied including EL technique. | |
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Internacional
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Si |
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Nombre congreso
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10th International Conference on Concentrator Photovoltaic Systems (CPV-10) |
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Tipo de participación
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960 |
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Lugar del congreso
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Albuquerque, NM (EEUU) |
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Revisores
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Si |
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ISBN o ISSN
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978-0-7354-1253-8 |
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DOI
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10.1063/1.4897021 |
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Fecha inicio congreso
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07/04/2014 |
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Fecha fin congreso
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09/04/2014 |
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Desde la página
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29 |
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Hasta la página
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32 |
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Título de las actas
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AIP CONFERENCE PROCEEDINGS |