Observatorio de I+D+i UPM

Descripción
Thermal management has become an important issue in the design of Schottky diode-based circuits for high power applications. This work presents a physics-based numerical electro-thermal model for Schottky diodes capable of evaluating the thermal effects on the electrical performance of devices and circuits. The advantages of this model are the inclusion of temperature- dependent material parameters, the capability to calculate internal temperature distributions, and the identification of regions where heat is generated, providing useful information for device design and circuit reliability. The developed electro-thermal model is integrated into a circuit simulator in order to provide a tool which can be used to analyze, design and optimize Schottky diode-based circuits for high power operation. This tool has been validated with a 200 GHz doubler from the Jet Propulsion Laboratory (JPL-NASA). A better agreement with measurement results at high input powers is obtained with our model compared with other previous models reported in the literature due to the self-consistent implementation of the temperature-dependency of physical parameters like electron mobility and saturation velocity.
Internacional	Si
JCR del ISI	Si
Título de la revista	Ieee Transactions on Terahertz Science And Technology
ISSN	2156-342X
Factor de impacto JCR	4,342
Información de impacto
Volumen	4
DOI	10.1109/TTHZ.2014.2337655
Número de revista	5
Desde la página	597
Hasta la página	604
Mes	SEPTIEMBRE
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Esta actividad pertenece a memorias de investigación

• Autor: Carlos Gustavo Perez Moreno (UPM)
• Autor: Jesus Grajal De la Fuente (UPM)

• Creador: Grupo de Investigación: Microondas y Radar
• Departamento: Señales, Sistemas y Radiocomunicaciones