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Descripción
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| III-V/Si multijunction solar cells utilizing active Si sub-cells, rather than just Si substrates ? a ?Si-plus? architecture ? hold the potential for high conversion efficiencies on par with pure III-V multijunction structures, but at substantially lower costs. Although a goal of PV researchers for decades, progress to this end has been hampered by issues related to heterovalent (polar/nonpolar) epitaxy and lattice mismatch at the III-V/Si interface. However, recent work on the high-quality epitaxy of GaP on Si(100) substrates as a small-mismatch integration approach, with control and suppression of nucleation-related defects, including antiphase domains, stacking faults, and microtwins, via both MBE [1] and MOCVD [2,3], has provided realistic pathways for the development of these structures. | |
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Internacional
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Si |
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Nombre congreso
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40th IEEE Photovoltaic Specialists Conference (40th IEEE PVSC) |
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Tipo de participación
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960 |
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Lugar del congreso
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Denver, CO (EEUU) |
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Revisores
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Si |
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ISBN o ISSN
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978-1-4799-4398-2 |
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DOI
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Fecha inicio congreso
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08/06/2014 |
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Fecha fin congreso
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13/06/2014 |
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Desde la página
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1 |
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Hasta la página
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4 |
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Título de las actas
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Proc. 40th IEEE PVSC |