Observatorio de I+D+i UPM

Memorias de investigación
Ponencias en congresos:
Component integration strategies in metamorphic 4-junction III-V concentrator solar cells
Año:2014
Áreas de investigación
  • Semiconductores ii-vi, iii-v y iv-iv,
  • Células solares
Datos
Descripción
Progressing beyond 3-junction inverted-metamorphic multijunction solar cells grown on GaAs substrates, to 4-junction devices, requires the development of high quality metamorphic 0.7 eV GaInAs solar cells. Once accomplished, the integration of this subcell into a full, Monolithic, series connected, 4J-IMM structure demands the development of a metamorphic tunnel junction lattice matched to the 1eV GaInAs subcell. Moreover, the 0.7 eV junction adds about 2 hours of growth time to the structure, implying a heavier annealing of the subcells and tunnel junctions grown first. The final 4J structure is above 20 Pm thick, with about half of this thickness used by the metamorphic buffers required to change the lattice constant throughout the structure. Thinning of these buffers would help reduce the total thickness of the 4J structure to decrease its growth cost and the annealing time. These three topics: development of a metamorphic tunnel junction for the 4th junction, analysis of the annealing, and thinning of the structure, are tackled in this work. The results presented show the successful implementation of an antimonide-based tunnel junction for the 4th junction and of pathways to mitigate the impact of annealing and reduce the thickness of the metamorphic buffers.
Internacional
Si
Nombre congreso
10th International Conference on Concentrator Photovoltaic Systems - CPV-10
Tipo de participación
960
Lugar del congreso
Albuquerque, NM (EEUU)
Revisores
Si
ISBN o ISSN
978-0-7354-1253-8
DOI
10.1063/1.4897024
Fecha inicio congreso
07/04/2014
Fecha fin congreso
09/04/2014
Desde la página
41
Hasta la página
44
Título de las actas
AIP Conference Proceedings 1616
Esta actividad pertenece a memorias de investigación
Participantes
  • Autor: Ivan Garcia Vara (UPM)
  • Autor: Vincenzo Orlando (UPM)
  • Autor: Pilar Espinet González (UPM)
  • Autor: Neftali Nuñez Mendoza (UPM)
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Departamento: Electrónica Física
  • Centro o Instituto I+D+i: Instituto de Energía Solar
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