Memorias de investigación
Other publications:
Physical model for GaN HEMT design optimization in high frequency switching applications,
Year:2014

Research Areas
  • Engineering

Information
Abstract
Physical model for GaN HEMT design optimization in high frequency switching applications,
International
Si
Entity
ESSDERC/ESSCIRC,
Place
Venice, Italy
Pages
234-240
Reference/URL
Publication type
Conference
Participants
  • Autor: D. Cucak
  • Autor: M. Vasic
  • Autor: O. Garcia
  • Autor: J. Oliver
  • Autor: P. Alou
  • Autor: J. A. Cobos
  • Autor: Ashu Wang . UPM
  • Autor: Sara Martin Horcajo UPM
  • Autor: M.-F. Romero
  • Autor: Fernando Calle Gomez UPM

Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Grupo de Dispositivos Semiconductores del ISOM
  • Departamento: Ingeniería Electrónica
  • Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología