Memorias de investigación
Book chapters:
Selective area growth of GaN nanowires by plasma-assisted molecular beam epitaxy
Year:2014

Research Areas
  • Physics - Semiconductors and band structure

Information
Abstract
Selective area growth of GaN nanowires by plasma-assisted molecular beam epitaxy, chapter 9
International
Si
Book Edition
1
Book Publishing
ISTELtd and John Wiley&son,2014
ISBN
0000000000000
Series
Book title
Wide Band Gap Semiconductors Nanowires 1
From page
10
To page
20
Participants

Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Grupo de Dispositivos Semiconductores del ISOM
  • Departamento: Ingeniería Electrónica
  • Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología