Memorias de investigación
Communications at congresses:
A built-in CMOS Total Ionization Dose smart sensor
Year:2014
Research Areas
  • Electronic circuits,
  • Microelectronic design,
  • Design of mixed integrate circuits,
  • Sensor devices
Information
Abstract
Total Ionization Dose (TID) is traditionally measured by radiation sensitive FETs (RADFETs) that require a radiation hardened Analog-to-Digital Converter (ADC) stage. This work introduces a TID sensor based on a delay path whose propagation time is sensitive to the absorbed radiation. It presents the following advantages: it is a digital sensor able to be integrated in CMOS circuits and programmable systems such as FPGAs; it has a configurable sensitivity that allows to use this device for radiation doses ranging from very low to relatively high levels; its interface helps to integrate this sensor in a multidisciplinary sensor network; it is self-timed, hence it does not need a clock signal that can degrade its accuracy. The sensor has been prototyped in a 0.35?m technology, has an area of 0.047mm2, of which 22% is dedicated to measuring radiation, and an energy per conversion of 463pJ. Experimental irradiation tests have validated the correct response of the proposed TID sensor.
International
Si
Congress
IEEE Sensors
960
Place
Valencia
Reviewers
Si
ISBN/ISSN
978-1-4799-0161-6
10.1109/ICSENS.2014.6984935
Start Date
02/11/2014
End Date
05/11/2014
From page
70
To page
73
SENSORS, 2014 IEEE
Participants
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Laboratorio de Sistemas Integrados (LSI)
  • Departamento: Ingeniería Electrónica