Observatorio de I+D+i UPM

Descripción
The usual way of modeling variability using threshold voltage shift and drain current amplification is becoming inaccurate as new sources of variability appear in sub-22nm devices. In this work we apply the four-injector approach for variability modeling to the simulation of SRAMs with predictive technology models from 20nm down to 7nm nodes. We show that the SRAMs, designed following ITRS roadmap, present stability metrics higher by at least 20% compared to a classical variability modeling approach. Speed estimation is also pessimistic, whereas leakage is underestimated if sub-threshold slope and DIBL mismatch and their correlations with threshold voltage are not considered.
Internacional	Si
Nombre congreso	CMOS Variability (VARI), 2014 5th European Workshop on
Tipo de participación	960
Lugar del congreso	Palma de Mallorca
Revisores	Si
ISBN o ISSN	978-1-4799-5399-8
DOI	10.1109/VARI.2014.6957075
Fecha inicio congreso	29/09/2014
Fecha fin congreso	01/10/2014
Desde la página	1
Hasta la página	6
Título de las actas	CMOS Variability (VARI), 2014 5th European Workshop on

Esta actividad pertenece a memorias de investigación

• Autor: Pablo Royer Del Barrio (UPM)
• Autor: M. Luisa Lopez Vallejo (UPM)
• Autor: Fernando Garcia Redondo (UPM)
• Autor: Carlos Alberto Lopez Barrio (UPM)

• Creador: Grupo de Investigación: Laboratorio de Sistemas Integrados (LSI)
• Departamento: Ingeniería Electrónica