Observatorio de I+D+i UPM

Memorias de investigación
Artículos en revistas:
On the effectiveness of lateral excitation of shear modes in AlN layered resonators
Año:2014
Áreas de investigación
  • Tecnología electrónica y de las comunicaciones
Datos
Descripción
We describe the fabrication and frequency characterization of different structures intended for the lateral excitation of shear modes in AlN c-axis-oriented films. AlN films are deposited on moderately doped silicon substrates covered either with partially metallic or fully insulating Bragg mirrors, and on insulating glass plates covered with insulating acoustic reflectors. TiOx seed layers are used to promote the growth of highly c-axis oriented AlN films, which is confirmed by XRD and SAW measurements. The excitation of the resonant modes is achieved through coplanar Mo electrodes of different geometries defined on top of the AlN films. All the structures analyzed display a clear longitudinal mode travelling at 11,000 m/s, whose excitation is attributed to the direction of the electric field (parallel to the c-axis) below the electrodes; this is enhanced when a conductive plane (metallic layer or Si substrate) is present under the piezoelectric layer. Conversely, only a weak shear resonance (6,350 m/s) is stimulated through the effect of coplanar electrodes, which is explained by the weakness of the electric field strength parallel to the surface between the electrodes. A significantly more effective excitation of shear modes can be achieved by normal excitation of AlN films with tilted c-axis.
Internacional
Si
JCR del ISI
Si
Título de la revista
Ultrasonics
ISSN
0041-624X
Factor de impacto JCR
1,805
Información de impacto
Volumen
54
DOI
Número de revista
6
Desde la página
1504
Hasta la página
1508
Mes
SIN MES
Ranking
Esta actividad pertenece a memorias de investigación
Participantes
  • Autor: Marta Clement Lorenzo (UPM)
  • Autor: Jesus Sangrador Garcia (UPM)
  • Autor: Teona Mirea (UPM)
  • Autor: Enrique Iborra Grau (UPM)
  • Autor: Jimena Olivares Roza (UPM)
  • Autor: Mario De Miguel Ramos (UPM)
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Microsistemas y Materiales Electrónicos
  • Departamento: Ingeniería Electrónica
S2i 2021 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)