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Descripción
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| Aluminium nitride (AlN) films with different thicknesses (from 2.3 to 4.7 microns) were deposited ontohigh resistivity silicon substrates using magnetron sputtering. Crystalline and bonding structures of thedeposited AlN films were characterised. The AlN films showed a highly c-axis texture. AlN film based sur-face acoustic wave (SAW) devices were fabricated and characterised. The SAW devices showed Rayleighwave transmission band with a large side-lobe suppression of ?15 dB. With the increase in film thickness,both the central band frequency and electromechanical coupling coefficient were increased, and valuesof temperature coefficient of frequency was increased linearly from ?21.3 to ?27.4 ppm/K. Microfluidicmanipulations including streaming, pumping and jetting have been realised using AlN SAW devices. Theapplied RF power boundary between streaming and pumping and that between the pumping and jettingdecreased with the increase of film thickness. The measured streaming and pumping velocities as wellas device surface temperatures increased with the film thickness. | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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Sensors And Actuators B-Chemical |
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ISSN
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0925-4005 |
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Factor de impacto JCR
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3,84 |
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Información de impacto
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Volumen
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202 |
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DOI
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Número de revista
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Desde la página
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984 |
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Hasta la página
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992 |
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Mes
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SIN MES |
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Ranking
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