Memorias de investigación
Research Publications in journals:
Characterisation of aluminium nitride films and surface acoustic wave devices for microfluidic applications
Year:2014

Research Areas
  • Electronic technology and of the communications

Information
Abstract
Aluminium nitride (AlN) films with different thicknesses (from 2.3 to 4.7 microns) were deposited ontohigh resistivity silicon substrates using magnetron sputtering. Crystalline and bonding structures of thedeposited AlN films were characterised. The AlN films showed a highly c-axis texture. AlN film based sur-face acoustic wave (SAW) devices were fabricated and characterised. The SAW devices showed Rayleighwave transmission band with a large side-lobe suppression of ?15 dB. With the increase in film thickness,both the central band frequency and electromechanical coupling coefficient were increased, and valuesof temperature coefficient of frequency was increased linearly from ?21.3 to ?27.4 ppm/K. Microfluidicmanipulations including streaming, pumping and jetting have been realised using AlN SAW devices. Theapplied RF power boundary between streaming and pumping and that between the pumping and jettingdecreased with the increase of film thickness. The measured streaming and pumping velocities as wellas device surface temperatures increased with the film thickness.
International
Si
JCR
Si
Title
Sensors And Actuators B-Chemical
ISBN
0925-4005
Impact factor JCR
3,84
Impact info
Volume
202
Journal number
From page
984
To page
992
Month
SIN MES
Ranking
Participants
  • Autor: Mario De Miguel Ramos UPM
  • Autor: Enrique Iborra Grau UPM
  • Autor: Jimena Olivares Roza UPM
  • Autor: J. Zhou Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China
  • Autor: L. Garcia-Gancedo Electrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge, UK
  • Autor: H. Jin Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China
  • Autor: J.K. Luo Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China
  • Autor: A.S. Elhady Thin Film Centre, Scottish Universities Physics Alliance (SUPA), University of the West of Scotland, Paisley, UK
  • Autor: S.R. Dong Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China
  • Autor: D.M. Wang Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China
  • Autor: Y.Q. Fu Thin Film Centre, Scottish Universities Physics Alliance (SUPA), University of the West of Scotland, Paisley, UK

Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Microsistemas y Materiales Electrónicos
  • Departamento: Ingeniería Electrónica
  • Centro o Instituto I+D+i: Centro de Materiales y Dispositivos Avanzados para Tecnologías de Información y Comunicaciones