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Descripción
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| In this work we present the comparative study of sputtered AlN films by X-ray diffraction (XRD), infrared absorption in the reflectance mode (R-IR), atomic force microscopy (AFM) and the measurement of their piezoelectric response. The aim of this comparison is to achieve a good understanding of the information provided by each technique to relate it with the piezoelectric behaviour of the films. A large set of AlN films with different characteristics has been evaluated. We have observed that films with perfect c-axis orientation, as measured by XRD, exhibit an excellent piezoelectric response. The presence of traces of non-0002 reflections in the XRD patterns of some films, indicative of the existence of tilted grains, is related to a significant reduction in their piezoelectric response. In such cases, R-IR and AFM measurements are significantly more sensitive for the detection of tilted grains than conventional XRD measurements. | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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DIAM RELAT MATER |
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ISSN
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0925-9635 |
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Factor de impacto JCR
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1,788 |
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Información de impacto
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Volumen
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DOI
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Número de revista
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16 |
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1421 |
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1424 |
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