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Memorias de investigación
Artículos en revistas:
Combined assessment of piezoelectric AlN films using X-ray diffraction, infrared absorption and atomic force microscopy
Año:2007
Áreas de investigación
  • Industria electrónica
Datos
Descripción
In this work we present the comparative study of sputtered AlN films by X-ray diffraction (XRD), infrared absorption in the reflectance mode (R-IR), atomic force microscopy (AFM) and the measurement of their piezoelectric response. The aim of this comparison is to achieve a good understanding of the information provided by each technique to relate it with the piezoelectric behaviour of the films. A large set of AlN films with different characteristics has been evaluated. We have observed that films with perfect c-axis orientation, as measured by XRD, exhibit an excellent piezoelectric response. The presence of traces of non-0002 reflections in the XRD patterns of some films, indicative of the existence of tilted grains, is related to a significant reduction in their piezoelectric response. In such cases, R-IR and AFM measurements are significantly more sensitive for the detection of tilted grains than conventional XRD measurements.
Internacional
Si
JCR del ISI
Si
Título de la revista
DIAM RELAT MATER
ISSN
0925-9635
Factor de impacto JCR
1,788
Información de impacto
Volumen
DOI
Número de revista
16
Desde la página
1421
Hasta la página
1424
Mes
SIN MES
Ranking
Esta actividad pertenece a memorias de investigación
Participantes
  • Autor: Jimena Olivares Roza (UPM)
  • Autor: Marta Clement Lorenzo (UPM)
  • Autor: Enrique Iborra Grau (UPM)
  • Autor: Alfredo Sanz Hervas (UPM)
  • Autor: Sheila González Castilla (UPM)
  • Autor: Lucía Vergara Herrero (UPM)
  • Autor: Jesus Sangrador Garcia (UPM)
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Microsistemas y materiales electrónicos
  • Departamento: Tecnología Electrónica
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