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Descripción
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| MicroRaman spectroscopy was used for the characterization of heterostructured SiGe/Si nanowires. The NWs were grown with alloyed AuGa catalysts droplets with different Ga compositions aiming to make more abrupt heterojunctions. The heterojunctions were first characterized by TEM; then the NWs were scanned by the laser beam in order to probe the heterojunction. The capability of the MicroRaman spectroscopy for studying the heterojunction is discussed. The results show that the use of catalysts with lower Ge and Si solubility (AuGa alloys) permits to achieve more abrupt junctions. | |
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Internacional
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Si |
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Nombre congreso
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Materials Reseracrh Society 2014 Fall Meeting |
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Tipo de participación
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960 |
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Lugar del congreso
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Boston, Massachusetts, EE. UU. |
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Revisores
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Si |
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ISBN o ISSN
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DOI
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Fecha inicio congreso
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30/11/2014 |
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Fecha fin congreso
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05/12/2014 |
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Desde la página
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1 |
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Hasta la página
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6 |
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Título de las actas
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Materials Reseracrh Society 2014 Fall Meeting Materials Research Society Symposium Proceedings |