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Memorias de investigación
Artículos en revistas:
Multiscale modeling of defect formation during solid phase epitaxy regrowth of silicon
Año:2014
Áreas de investigación
  • Defectos
Datos
Descripción
This work presents a multiscale approach to understanding the defect formation during the evolution of solid-phase epitaxy regrowth in Si. A molecular dynamics (MD) simulation technique has been used to elucidate the defect formation mechanisms, as well as to deter- mine their nature. A hybrid lattice kinetic Monte Carlo (LKMC)?finite element method (FEM) model fed by the outcome of MD was subsequently implemented. It scales up the simulation times and sizes, while reproducing the important features of the defected regrowth predicted previously. FEM calculations provide the strain pattern due to the density variation between the amorphous and crystalline phases, which is then taken into account by the LKMC model by including the effect of the strain in the rates of recrystallization. Overall, this multiscale modeling provides a physical explanation of the generation of defects and its relation with the presence of strain. The model also captures the character of formed defects. It distinguishes two types: twins formed at {1 1 1} planes and dislocations produced by the collapse of the two recrystallization fronts. Simulation results are validated by comparing them with significant experiments reported in the literature.
Internacional
Si
JCR del ISI
Si
Título de la revista
Acta Materialia
ISSN
1359-6454
Factor de impacto JCR
3,941
Información de impacto
Datos JCR del año 2012
Volumen
82
DOI
Número de revista
Desde la página
115
Hasta la página
122
Mes
SIN MES
Ranking
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Participantes
  • Autor: Mónica Prieto de Pedro
  • Autor: Ignacio Romero Olleros (UPM)
  • Autor: Ignacio Martín-Bragado
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Grupo de Mecánica Computacional
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